ti.\*:("The 7th International Workshop on Bulk Nitride Semiconductors (IWBNS VII)")
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Growth of GaN boules via vertical HVPERICHTER, E; GRÜNDER, M; NETZEL, C et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 89-92, issn 0022-0248, 4 p.Conference Paper
Free exciton absorption in Ga1―xZnxN1―xOx alloysMAOFENG DOU; BALDISSERA, Gustavo; PERSSON, Clas et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 17-20, issn 0022-0248, 4 p.Conference Paper
Properties of nitrogen-doped titanium oxidesDAVID, D. G. F; GUERREIRO, J; DA SILVA, M. V. S et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 11-16, issn 0022-0248, 6 p.Conference Paper
Growth and strain characterization of high quality GaN crystal by HVPEHUIYUAN GENG; SUNAKAWA, Haruo; SUMI, Norihiko et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 44-49, issn 0022-0248, 6 p.Conference Paper
Hardness control for improvement of dislocation reduction in HVPE-grown freestanding GaN substratesFUJIKURA, Hajime; OSHIMA, Yuichi; MEGRO, Takeshi et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 38-43, issn 0022-0248, 6 p.Conference Paper
Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaNFEIGELSON, B. N; ANDERSON, T. J; ABRAHAM, M et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 21-26, issn 0022-0248, 6 p.Conference Paper
Development of GaN wafers for solid-state lighting via the ammonothermal methodLETTS, Edward; HASHIMOTO, Tadao; IKARI, Masanori et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 66-68, issn 0022-0248, 3 p.Conference Paper
Preparation of freestanding AlN substrates by hydride vapor phase epitaxy using hybrid seed substratesNAGASHIMA, Toru; HAKOMORI, Akira; YANAGI, Hiroyuki et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 75-79, issn 0022-0248, 5 p.Conference Paper
Development of a novel in situ monitoring technology for ammonothermal reactorsALT, Nicolas S. A; MEISSNER, Elke; SCHLUECKER, Eberhard et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 2-4, issn 0022-0248, 3 p.Conference Paper
Growth of bulk GaN crystal by Na flux method under various conditionsMORI, Y; IMADE, M; SASAKI, T et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 72-74, issn 0022-0248, 3 p.Conference Paper
Multi feed seed (MFS) high pressure crystallization of 1―2 in GaNBOCKOWSKI, M; GRZEGORY, I; LUCZNIK, B et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 5-10, issn 0022-0248, 6 p.Conference Paper
Vapor-phase epitaxial growth of GaN films using Ga2O vapor and NH3IMADE, Mamoru; YUAN BU; SUMI, Tomoaki et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 56-59, issn 0022-0248, 4 p.Conference Paper
Formation of AlN on sapphire surfaces by high-temperature heating in a mixed flow of H2 and N2KUMAGAI, Yoshinao; IGI, Takahiro; ISHIZUKI, Masanari et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 60-65, issn 0022-0248, 6 p.Conference Paper
Structural and optical properties of thick freestanding AlN films prepared by hydride vapor phase epitaxyFREITAS, J. A; CULBERTSON, J. C; MASTRO, M. A et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 33-37, issn 0022-0248, 5 p.Conference Paper
Control of the free carrier concentrations in a Si-doped freestanding GaN grown by hydride vapor phase epitaxyHYUN JONG PARK; KIM, Hong-Yeol; JUN YOUNG BAE et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 85-88, issn 0022-0248, 4 p.Conference Paper
